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光子晶体波导分布反馈激光器及制作方法 专利
专利类型: 发明, 申请日期: 2006-12-06, 公开日期: 2009-06-04, 2009-06-11
发明人:  赵致民;  许兴胜;  陈弘达;  李芳;  刘育梁
Adobe PDF(635Kb)  |  收藏  |  浏览/下载：983/147  |  提交时间：2009/06/11
无权访问的条目 期刊论文
作者:  Wang CX (Wang Chun-Xia);  Xu XS (Xu Xing-Sheng);  Li F (Li Fang);  Du W (Du Wei);  Xiong GG (Xiong Gui-Guang);  Liu YL (Liu Yu-Liang);  Chen HD (Chen Hong-Da);  Wang, CX, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: cxwang@red.semi.ac.cn
Adobe PDF(424Kb)  |  收藏  |  浏览/下载：1104/230  |  提交时间：2010/04/11
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)  |  收藏  |  浏览/下载：1588/264  |  提交时间：2010/03/29
Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer