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STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS 会议论文
, Philadelphia, PA, 2009
作者:  Peng WB (Peng Wenbo);  Zeng XB (Zeng Xiangbo);  Liu SY (Liu Shiyong);  Xiao HB (Xiao Haibo);  Kong GL (Kong Guanglin);  Yu YD (Yu Yude);  Liao XB (Liao Xianbo)
Adobe PDF(735Kb)  |  收藏  |  浏览/下载：2847/686  |  提交时间：2010/08/16
Large-Signal Performance of 1.3 mu m InAs/GaAs quantum-dot lasers 会议论文
, Shanghai, PEOPLES R CHINA, AUG 30-SEP 03, 2009
作者:  Ji;  HM;  Cao;  YL;  Xu PF;  Gu YX;  Ma WQ;  Liu Y;  Wang X;  Xie L;  Yang T;  Ji, HM, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China
Adobe PDF(274Kb)  |  收藏  |  浏览/下载：1783/471  |  提交时间：2010/06/04
Demonstration of high efficient tunable lasing with one photonic crystal W1 waveguide 会议论文
, Shanghai, PEOPLES R CHINA, AUG 30-SEP 03, 2009
作者:  Zheng WH (Zheng Wanhua);  Xing MX (Xing Mingxin);  Chen;  W (Chen Wei);  Zhou WJ (Zhou Wenjun);  Liu AJ (Liu Anjin);  Wang HL (Wang Hailing);  Chen LH (Chen Lianghui)
Adobe PDF(551Kb)  |  收藏  |  浏览/下载：1653/324  |  提交时间：2010/06/04
Reconfigurable Optical Add-Drop Multiplexer Based on Silicon Photonic Wire Waveguide 会议论文
, Shanghai, PEOPLES R CHINA, 2009
作者:  Geng MM (Geng Minming);  Jia LX (Jia Lianxi);  Zhang L (Zhang Lei);  Yang L (Yang Lin);  Chen P (Chen Ping);  Wang T (Wang Tong);  Liu YL (Liu Yuliang);  Geng, MM, Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(406Kb)  |  收藏  |  浏览/下载：2171/516  |  提交时间：2010/06/04
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Zhou HY;  Qu SC;  Wang ZG;  Liang LY;  Cheng BC;  Liu JP;  Peng WQ;  Zhou, HY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhouhy@mail.semi.ac.cn
Adobe PDF(164Kb)  |  收藏  |  浏览/下载：1980/369  |  提交时间：2010/03/29
Anodic Alumina Films  
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1263/281  |  提交时间：2010/03/29
4h-sic