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MOCVD growth of cubic GaN: Materials and devices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Yang H;  Zhang SM;  Xu DP;  Li SF;  Zhao DG;  Fu Y;  Sun YP;  Feng ZH;  Zheng LX;  Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(380Kb)  |  收藏  |  浏览/下载：1562/238  |  提交时间：2010/10/29
Mocvd  Gan  Ingan  Cubic  Led  Chemical-vapor-deposition  Molecular-beam Epitaxy  Gallium Nitride  Phase Epitaxy  Ingan Films  Electroluminescence  Zincblende  Wurtzite  Mbe  
Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy 会议论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 47 (4), SEATTLE, WASHINGTON, OCT 26-28, 1999
作者:  Zhang WC;  Li Z;  Siddons DP;  Huang T;  Zhao LJ;  Kakuno EM;  Pietraski P;  Li CJ;  Zhang WC Brookhaven Natl Lab Upton NY 11973 USA.
Adobe PDF(623Kb)  |  收藏  |  浏览/下载：1429/322  |  提交时间：2010/11/15