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On the design and simulation of high speed electro-optic modulator based on SOI waveguide MOS dual capacitor structure 会议论文
2005 2nd IEEE International Conference on Group IV Photonics, Antwerp, BELGIUM, SEP 21-23, 2005
作者:  Chen SW;  Tu XG;  Yu JZ;  Chen, SW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Jia35,Qinghua E Rd, Beijing 100083, Peoples R China.
Adobe PDF(724Kb)  |  收藏  |  浏览/下载：1363/249  |  提交时间：2010/03/29
Studies of 6H-SiC devices 会议论文
CURRENT APPLIED PHYSICS, 2 (5), SEOUL, SOUTH KOREA, DEC 05-09, 2001
作者:  Wang SR;  Liu ZL;  Wang SR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
收藏  |  浏览/下载：910/0  |  提交时间：2010/11/15
Sic  Schottky  Pn Junction Diodes  Mos Capacitor  Junction Diodes