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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [8]
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发表日期:2006
语种:英语
文献类型:会议论文
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Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)
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浏览/下载:1396/203
  |  
提交时间:2010/03/29
Homoepitaxial Growth
Low-pressure Hot-wall Cvd
Structural And Optical Characteristics
Intentional Doping
Schottky Barrier Diodes
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Zeng, YX (Zeng, Yuxin)
;
Liu, W (Liu, Wei)
;
Yang, FH (Yang, Fuhua)
;
Xu, P (Xu, Ping)
;
Tan, PH (Tan, Pingheng)
;
Zheng, HZ (Zheng, Houzhi)
;
Zeng, YP (Zeng, Yiping)
;
Xing, YJ (Xing, Yingjie)
;
Yu, DP (Yu, Dapeng)
;
Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)
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浏览/下载:1608/264
  |  
提交时间:2010/03/29
Inas Quantum Dot
Photoluminescence
Modulation-doped
Field Effect Transistor
Mu-m
Capping Layer
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:
Shen, WJ
;
Duan, Y
;
Wang, J
;
Wang, QY
;
Zeng, YP
;
Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)
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浏览/下载:1719/615
  |  
提交时间:2010/03/29
Zno
Mocvd
Thermal Annealing
Photoluminescence
X-ray Diffraction
Atomic Force Microscopy
Pulsed-laser Deposition
Thin-films
Photoluminescence
Mechanisms
Epitaxy
Cvd
Si
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Fang, ZD (Fang, Zhidan)
;
Gong, M (Gong, Meng)
;
Miao, ZH (Miao, Zhenhua)
;
Niu, ZC (Niu, Zhichuan)
;
Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(431Kb)
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浏览/下载:1695/334
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提交时间:2010/03/29
Quantum Dots
Photoluminescence
Combination Layer
1.3 Mu-m
Lasers
Inalas
Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells
会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, Lisbon, PORTUGAL, SEP 04-09, 2005
作者:
Hu ZH (Hu Zhihua)
;
Liao XB (Liao Xianbo)
;
Diao HW (Diao Hongwei)
;
Cai Y (Cai Yi)
;
Zhang SB (Zhang Shibin)
;
Fortunato E (Fortunato Elvira)
;
Martins R (Martins Rodrigo)
;
Hu, ZH, New Univ Lisbon, Dept Mat Sci, P-2829516 Caparica, Portugal. 电子邮箱地址: zhu@uninova.pt
Adobe PDF(123Kb)
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浏览/下载:1933/499
  |  
提交时间:2010/03/29
Silicon
Structure and visible luminescence of ZnO nanoparticles
会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:
Peng, WQ (Peng, W. Q.)
;
Qu, SC (Qu, S. C.)
;
Cong, GW (Cong, G. W.)
;
Wang, ZG (Wang, Z. G.)
;
Peng, WQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wqpeng@semi.ac.cn
Adobe PDF(139Kb)
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浏览/下载:1921/624
  |  
提交时间:2010/03/29
Nanoparticles
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy
会议论文
JOURNAL OF CRYSTAL GROWTH, Singapore, SINGAPORE, JUL 03-08, 2005
作者:
Jiang, DS
;
Qu, YH
;
Ni, HQ
;
Wu, DH
;
Xu, YQ
;
Niu, ZC
;
Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(204Kb)
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浏览/下载:1815/365
  |  
提交时间:2010/03/29
Molecular Beam Epitaxy
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
;
Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)
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  |  
浏览/下载:1753/401
  |  
提交时间:2010/03/29
Gainnas/gaas Quantum Wells
Optical Properties
Nonradiative Recombination Effect
Time-resolved Photoluminescence
Pl Decay Dynamics
Pl Thermal Quenching
Molecular-beam Epitaxy
Gaasn Alloys
Excitation