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Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Islam MR;  Chen NF;  Yamada M;  Islam, MR, Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna 920300, Bangladesh. 电子邮箱地址: islambit@yahoo.com
Adobe PDF(159Kb)  |  收藏  |  浏览/下载：1264/260  |  提交时间：2010/03/29
Raman Scattering  
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Li, Z (Li, Z.);  Li, CJ (Li, C. J.);  Li, Z, Brookhaven Natl Lab, Upton, NY 11973 USA. 电子邮箱地址: zhengl@bnl.gov
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1353/373  |  提交时间：2010/03/29
Dlts  
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots 会议论文
JOURNAL OF LUMINESCENCE, Shanghai, PEOPLES R CHINA, AUG 01-05, 2005
作者:  Wang FZ;  Chen ZH;  Sun J;  Bai LH;  Huang SH;  Xiong H;  Jin P;  Wang ZG;  Shen SC;  Chen, ZH, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn
Adobe PDF(269Kb)  |  收藏  |  浏览/下载：1744/293  |  提交时间：2010/03/29
Quantum Dots