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Heteroepitaxy of cubic GaN: influence of interface structure 会议论文
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, (157), OXFORD, ENGLAND, APR 07-10, 1997
作者:  Trampert A;  Brandt O;  Yang H;  Yang B;  Ploog KH;  Trampert A Paul Drude Inst Festkorperelekt Hausvogteipl 5-7 D-10117 Berlin Germany.
Adobe PDF(317Kb)  |  收藏  |  浏览/下载：1275/219  |  提交时间：2010/11/15
Molecular-beam Epitaxy  Gan/gaas(001)  Growth  
Structural and photoelectric studies on double barrier quantum well infrared detectors 会议论文
1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, HONG KONG, HONG KONG, 35672
作者:  Wu WG;  Jiang DS;  Cui LQ;  Song CY;  Zhuang Y;  Wu WG Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1193/234  |  提交时间：2010/11/15