×
验证码:
换一张
忘记密码?
记住我
×
登录
中文版
|
English
中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
ALL
ORCID
题名
作者
学科领域
关键词
文献类型
出处
收录类别
出版者
发表日期
存缴日期
资助项目
学科门类
学习讨论厅
图片搜索
粘贴图片网址
首页
研究单元&专题
作者
文献类型
学科分类
知识图谱
新闻&公告
在结果中检索
研究单元&专题
中国科学院半导体研... [77]
作者
徐波 [5]
韩培德 [3]
江德生 [2]
刘舒曼 [2]
叶小玲 [2]
张加勇 [1]
更多...
文献类型
会议论文 [77]
发表日期
2008 [5]
2004 [6]
2003 [6]
2002 [9]
2001 [8]
2000 [13]
更多...
语种
英语 [77]
出处
SEMICONDUC... [5]
PHYSICS OF... [4]
2002 3RD I... [3]
2008 2ND I... [2]
CZECHOSLOV... [2]
DISPLAY DE... [2]
更多...
资助项目
收录类别
CPCI-S [77]
资助机构
SPIE.; COS... [5]
Univv Nebr... [4]
Chinese In... [3]
SPIE.; Chi... [3]
China Natl... [2]
China Opt ... [2]
更多...
×
知识图谱
SEMI OpenIR
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共77条,第1-10条
帮助
限定条件
收录类别:CPCI\-S
语种:英语
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
期刊影响因子升序
期刊影响因子降序
WOS被引频次升序
WOS被引频次降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
题名升序
题名降序
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
;
Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(799Kb)
  |  
收藏
  |  
浏览/下载:1750/232
  |  
提交时间:2010/03/09
Induced Refractive-index
Growth
Lasers
Gaas
Observation of photogalvanic current for interband absorption in InN films at room temperature
会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:
Tang, CG
;
Chen, YH
;
Liu, Y
;
Zhang, RQ
;
Liu, XL
;
Wang, ZG
;
Zhang, R
;
Zhang, Z
;
Tang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(236Kb)
  |  
收藏
  |  
浏览/下载:1992/374
  |  
提交时间:2010/03/09
Quantum-wells
Spin
High Q microring resonator in silicon-on-insulator rib waveguides - art. no. 68380J
会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:
Huang, QZ
;
Yu, JZ
;
Chen, SW
;
Xu, XJ
;
Han, WH
;
Fan, ZC
;
Huang, QZ, Chinese Acad Sci, Inst Semicond, Natl Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(324Kb)
  |  
收藏
  |  
浏览/下载:1902/571
  |  
提交时间:2010/03/09
Resonator
Silicon-on-insulator
Quality Factor
Propagation Loss
Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D
会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:
Wang, L
;
Zhao, LJ
;
Chen, WX
;
Pan, JQ
;
Zhou, F
;
Zhu, HL
;
Wang, W
;
Wang, L, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(737Kb)
  |  
收藏
  |  
浏览/下载:1754/408
  |  
提交时间:2010/03/09
Photonic Integrated Circuit
Y-branch
Superluminescent Diode
Bundle Integrated Guide
Far Field Pattern
Reactive Ion Etching
The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Yang, H
;
Chen, Y
;
Wang, LB
;
Yi, XY
;
Fan, JM
;
Liu, ZQ
;
Yang, FH
;
Wang, LC
;
Wang, GH
;
Zeng, YP
;
Li, JM
;
Yang, H, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(297Kb)
  |  
收藏
  |  
浏览/下载:7752/2096
  |  
提交时间:2010/03/09
Gan-based Led
Grinding
Ray Tracing
Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure
会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:
Xu Y
;
Zhu XP
;
Ye XJ
;
Kang XN
;
Cao Q
;
Guo L
;
Chen LH
;
Xu Y Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(559Kb)
  |  
收藏
  |  
浏览/下载:1791/645
  |  
提交时间:2010/10/29
Finite-difference Methods
Algainp Laser Diodes
Risa
Operation
Layer
Nm
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:
Ye XL
;
Chen YH
;
Xu B
;
Zeng YP
;
Wang ZG
;
Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)
  |  
收藏
  |  
浏览/下载:1730/258
  |  
提交时间:2010/10/29
Short-period Superlattices
Raman-scattering
Quantum-wells
Growth
Roughness
Segregation
Alas/gaas
Alas
Gaas
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Chen Z
;
Chua SJ
;
Yuan HR
;
Liu XL
;
Lu DC
;
Han PD
;
Wang ZG
;
Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
Adobe PDF(225Kb)
  |  
收藏
  |  
浏览/下载:1612/329
  |  
提交时间:2010/10/29
Metalorganic Chemical Vapor Deposition
Semiconducting Iii-v Materials
Doped Al(x)Ga1-xn/gan Heterostructures
Carrier Confinement
Effect Transistors
Photoluminescence
Mobility
Heterojunction
Interface
Hfets
Tolerance analysis for incident angle of volume phase holographic grating used in optical channel performance monitor
会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:
Xin HL
;
Li F
;
Cao P
;
He YJ
;
Chen P
;
Liu YL
;
Xin HL Chinese Acad Sci Inst Semicond Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(571Kb)
  |  
收藏
  |  
浏览/下载:1367/196
  |  
提交时间:2010/10/29
Ocpm
Vphg
Incident Angle
Tolerance
Study of infrared luminescence from Er-implanted GaN films
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Chen WD
;
Song SF
;
Zhu JJ
;
Wang XL
;
Chen CY
;
Hsu CC
;
Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: wdchen@red.semi.ac.cn
Adobe PDF(219Kb)
  |  
收藏
  |  
浏览/下载:1394/325
  |  
提交时间:2010/11/15
Doping
Metalorganic Chemical Vapor Deposition
Molecular Beam Epitaxy
Gallium Compounds
Semiconducting Gallium Compounds
Erbium