Si-based membrane resonant cavity enhanced photodetectors

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Si-based membrane resonant cavity enhanced photodetectors
	Cheng BW; Yao F; Xue CL; Zhang JU; Mao RW; Li CB; Luo LP; Zuo YH; Wang QM; Cheng, BW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
	2005
会议名称	2nd IEEE International Conference on Group IV Photonics
会议录名称	2005 2nd IEEE International Conference on Group IV Photonics
页码	105-107
会议日期	SEP 21-23, 2005
会议地点	Antwerp, BELGIUM
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-9070-9
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Si-based membrane RCE photodetectors were introduced. The RCE photodiodes were fabricated on silicon membranes formed from SOI substrate. Compared with the conventional p-i-n photodiode, the responsivity has a threefold enhancement.
关键词	1.3 Mu-m
学科领域	光电子学
主办者	IEEE.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9878
专题	中国科学院半导体研究所（2009年前）
通讯作者	Cheng, BW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Cheng BW,Yao F,Xue CL,et al. Si-based membrane resonant cavity enhanced photodetectors[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2005:105-107.