A low power integrated CMOS transmitter for BCI system
Zhang X (Zhang Xu); Liu HJ (Liu Haijun); Liu JB (Liu Jinbin); Huang BJ (Huang Beiju); Zhu L (Zhu Lin); Gu M (Gu Ming); Chen HD (Chen Hongda); Zhang, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
2007
会议名称International Workshop on Electron Devices and Semiconductor Technology
会议录名称2007 International Workshop on Electron Devices and Semiconductor Technology
页码202-205
会议日期JUN 03-04, 2007
会议地点Beijing, PEOPLES R CHINA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN978-1-4244-1097-2
部门归属chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要The prototype wafer of a low power integrated CMOS Transmitter for short-range biotelemetry application has been designed and fabricated, which is prospective to be implanted in the human brain to transfer the extracted neural information to the external computer. The transmitter consists of five parts, a bandgap current regulator, a ring oscillator, a buffer, a modulator and a power transistor. High integration and low power are the most distinct criteria for such an implantable integrated circuit. The post-simulation results show that under a 3.3 V power supply the transmitter provides 100.1 MHz half-wave sinusoid current signal to drive the off-chip antenna, the output peak current range is -0.155 mA similar to 1.250 mA, and on-chip static power dissipation is low to 0.374 mW. All the performances of the transmitter satisfy the demands of wireless real-time BCI system for neural signals recording and processing.
关键词Brain Computer Interface
学科领域光电子学
主办者IEEE Electron Devices Soc. Tsinghua Univ
收录类别其他
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9832
专题中国科学院半导体研究所(2009年前)
通讯作者Zhang, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Zhang X ,Liu HJ ,Liu JB ,et al. A low power integrated CMOS transmitter for BCI system[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2007:202-205.
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