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| Synthesis of GaN nanorods with vertebra-like morphology | |
| Gao, HY (Gao, Haiyong); Li, JM (Li, Jinmin); Gao, HY, Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China. | |
| 2006 | |
| 会议名称 | IEEE International Conference of Nano/Micro Engineered and Molecular Systems |
| 会议录名称 | 2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems |
| 页码 | Vols 1-3: 196-199 |
| 会议日期 | JAN 18-21, 2006 |
| 会议地点 | Zhuhai, PEOPLES R CHINA |
| 出版地 | 345 E 47TH ST, NEW YORK, NY 10017 USA |
| 出版者 | IEEE |
| ISBN | 978-1-4244-0139-0 |
| 部门归属 | chinese acad sci, inst semicond, novel mat dept, beijing 100083, peoples r china |
| 摘要 | GaN nanorods with vertebra-like morphology were synthesized by nitriding Ga2O3/ZnO films at 1000 degrees C for 20min. Ga2O3 thin films and ZnO middle layers were pre-deposited in turn on Si(111) substrates by r.f. magnetron sputtering system. In the flowing ammonia ambient, ZnO was reducted to Zn and Zu sublimated at 1000 degrees C. Ga2O3 was reducted to Ga2O and Ga2O reacted with NH3 to synthesize GaN nanorods in the help of the sublimation of Zn. The structure and morphology of the nanorods were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), The composition of GaN nanorods was studied by energy dispersive spectroscopy (EDS) and fourier transform infrared (FTIR) system. |
| 关键词 | Gan Nanorods Ga2o3/zno Films Nitritding Morphology Chemical-vapor-deposition Films |
| 学科领域 | 半导体材料 |
| 主办者 | IEEE. |
| 收录类别 | CPCI-S |
| 语种 | 英语 |
| 文献类型 | 会议论文 |
| 条目标识符 | http://ir.semi.ac.cn/handle/172111/9824 |
| 专题 | 中国科学院半导体研究所（2009年前） |
| 通讯作者 | Gao, HY, Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Gao, HY ,Li, JM ,Gao, HY, Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China.. Synthesis of GaN nanorods with vertebra-like morphology[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:Vols 1-3: 196-199. |
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