Self-assembled GaAs quantum rings by MBE droplet epitaxy

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Self-assembled GaAs quantum rings by MBE droplet epitaxy
	Huang, SS (Huang, Shesong); Niu, ZC (Niu, Zhichuan); Xia, JB (Xia, Jianbai); Huang, SS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
	2007
会议名称	China International Conference on Nanoscience and Technology (ChinaNANO 2005)
会议录名称	Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA
页码	Pts 1 and 2 121-123: 541-544 Part 1-2
会议日期	JUN 09-11, 2005
会议地点	Beijing, PEOPLES R CHINA
出版地	LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	1012-0394
ISBN	978-3-908451-30-3
部门归属	chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
摘要	Fabrication of semiconductor nanostructures such as quantum dots (QDs), quantum rings (QRs) has been considered as the important step for realization of solid state quantum information devices, including QDs single photon emission source, QRs single electron memory unit, etc. To fabricate GaAs quantum rings, we use Molecular Beam Epitaxy (MBE) droplet technique in this report. In this droplet technique, Gallium (Ga) molecular beams are supplied initially without Arsenic (As) ambience, forming droplet-like nano-clusters of Ga atoms on the substrate, then the Arsenic beams are supplied to crystallize the Ga droplets into GaAs crystals. Because the morphologies and dimensions of the GaAs crystal are governed by the interplay between the surface migration of Ga and As adatoms and their crystallization, the shape of the GaAs crystals can be modified into rings, and the size and density can be controlled by varying the growth temperatures and As/Ga flux beam equivalent pressures(BEPs). It has been shown by Atomic force microscope (AFM) measurements that GaAs single rings, concentric double rings and coupled double rings are grown successfully at typical growth temperatures of 200 C to 300 C under As flux (BEP) of about 1.0 x 10(-6) Torr. The diameter of GaAs rings is about 30-50 nm and thickness several nm.
关键词	Quantum Single Rings Concentric Quantum Double Rings Coupled Concentric Quantum Double Ring Droplet Epitaxy
学科领域	半导体物理
主办者	Natl Ctr Nanosci & Technol.; Natl Steering Comm Nanotechnol.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9796
专题	中国科学院半导体研究所（2009年前）
通讯作者	Huang, SS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Huang, SS ,Niu, ZC ,Xia, JB ,et al. Self-assembled GaAs quantum rings by MBE droplet epitaxy[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2007:Pts 1 and 2 121-123: 541-544 Part 1-2.

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