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| SHicon-based resonant-cavity-enhanced photodetectors | |
| Cheng BW (Cheng Buwen); Li CB (Li Chuanbo); Mao RW (Mao Rongwei); Yao F (Yao Fei); Xue CL (Xue Chunlai); Zhang JG (Zhang Jianguo); Shi WH (Shi Wenhua); Zuo YH (Zuo Yuhua); Yu JZ (Yu Jinzhong); Wang QM (Wang Qiming); Cheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. | |
| 2006 | |
| Conference Name | 3rd International Conference on Group IV Photonics |
| Source Publication | 2006 3rd IEEE International Conference on Group IV Photonics |
| Pages | 182-184 |
| Conference Date | SEP 13-15, 2006 |
| Conference Place | Ottawa, CANADA |
| Publication Place | 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Publisher | IEEE |
| ISBN | 978-1-4244-0095-9 |
| metadata_83 | chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china |
| Abstract | Silicon-based resonant-cavity-enhanced photodetectors (RCE-PD) with Si, Ge islands and InGaAs as absorption materials were introduced, respectively. The Ge islands and Si RCE-PD had a membrane structure and the Si-based InGaAs RCE-PDs were fabricated by bonding technology. |
| Keyword | High-speed |
| Subject Area | 光电子学 |
| Funding Organization | IEEE. |
| Indexed By | 其他 |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/9782 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Corresponding Author | Cheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Cheng BW ,Li CB ,Mao RW ,et al. SHicon-based resonant-cavity-enhanced photodetectors[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:182-184. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2242.pdf（288KB） | 限制开放 | -- | Application Full Text | |||
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