SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
采用光子晶体微腔和晶片键合技术实现电注入的单光子源
郑婉华; 刘安金; 任 刚; 邢名欣; 渠宏伟; 陈良惠 
2009-08-05
Rights Holder中科院半导体研究所
Date Available4003
Country中国
Subtype发明
Application Date2008-01-30
Language中文
Status公开
Application NumberCN200810057178
Patent Agent汤宝平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/9070
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郑婉华,刘安金,任 刚,等. 采用光子晶体微腔和晶片键合技术实现电注入的单光子源[P]. 2009-08-05.
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