High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer
	Yan, JC; Wang, JX; Liu, Z; Liu, NX; Li, JM; Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China.
	2008
会议名称	9th International Conference on Solid-State and Integrated-Circuit Technology
会议录名称	2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY
页码	VOLS 1-4: 714-717
会议日期	OCT 20-23, 2008
会议地点	Beijing, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-2185-5
部门归属	[yan, jianchang; wang, junxi; liu, zhe; liu, naixin; li, jinmin] chinese acad sci, inst semicond, r&d ctr semicond lighting, beijing 100083, peoples r china
摘要	When AlGaN is grown on GaN template, crack networks invariably generate when the thickness of the AlGaN layers over GaN exceeds the critical value. We used thin high temperature deposited AlN layer (HT-AlN) as the interlayer between GaN template and AlGaN epilayer which was very effective in eliminating the cracks in AlGaN epilayer. AlGaN layers with high Al mole fractions were also grown. Characterization showed that the crystalline quality of AlGaN epilayer was fairly good even when the At mole fraction was high.
关键词	Diodes
学科领域	半导体材料
主办者	IEEE Beijing Sect.; Chinese Inst Elect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid State Circuits Soc.; IEEE Circuites & Syst Soc.; IEEE Hong Kong EDS, SSCS Chapter.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; Elect Div IEEE.; URSI Commiss D.; Inst Elect Engineers Korea.; Assoc Asia Pacific Phys Soc.; Peking Univ, IEEE EDS Student Chapter.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8280
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Yan, JC,Wang, JX,Liu, Z,et al. High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-4: 714-717.

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