Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N

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	Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N
	Zhao LJ; Zhang J; Wang L; Cheng YB; Pan JQ; Liu HB; Zhu HL; Zhou F; Bian J; Wang BJ; Zhu NH; Wei W; Zhao, LJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
	2008
会议名称	Conference on Semiconductor Lasers and Applications III
会议录名称	SEMICONDUCTOR LASERS AND APPLICATIONS III
页码	6824: N8240-N8240
会议日期	NOV 12-13, 2007
会议地点	Beijing, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	978-0-8194-6999-1
部门归属	[zhao ling-juan; zhang jing; wang lu; cheng yuan-bing; pan jiao-qing; liu hong-bo; zhu hon-liang; zhou fan; bian jing; wang bao-jun; zhu ning-hua; wei wang] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Wavelength tunable electro-absorption modulated distributed Bragg reflector lasers (TEMLs) are promising light source in dense wavelength division multiplexing (DWDM) optical fiber communication system due to high modulation speed, small chirp, low drive voltage, compactness and fast wavelength tuning ability. Thus, increased the transmission capacity, the functionality and the flexibility are provided. Materials with bandgap difference as large as 250nm have been integrated on the same wafer by a combined technique of selective area growth (SAG) and quantum well intermixing (QWI), which supplies a flexible and controllable platform for the need of photonic integrated circuits (PIC). A TEML has been fabricated by this technique for the first time. The component has superior characteristics as following: threshold current of 37mA, output power of 3.5mW at 100mA injection and 0V modulator bias voltage, extinction ratio of more than 20 dB with modulator reverse voltage from 0V to 2V when coupled into a single mode fiber, and wavelength tuning range of 4.4nm covering 6 100-GHz WDM channels. A clearly open eye diagram is observed when the integrated EAM is driven with a 10-Gb/s electrical NRZ signal. A good transmission characteristic is exhibited with power penalties less than 2.2 dB at a bit error ratio (BER) of 10(-10) after 44.4 km standard fiber transmission.
关键词	Tunable Lasers
学科领域	光电子学
主办者	SPIE.; Chinese Opt Soc.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7856
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao, LJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhao LJ,Zhang J,Wang L,et al. Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2008:6824: N8240-N8240.

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