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GaAs基图形衬底上GaAs 和InAs 纳米结构的控位生长
周慧英
Subtype博士
Thesis Advisor王占国
2007
Degree Grantor中国科学院半导体研究所
Place of Conferral北京
Subject Area材料物理与化学
Language中文
Date Available2009-04-13 ; 2009-07-09
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/5827
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 周慧英. GaAs基图形衬底上GaAs 和InAs 纳米结构的控位生长[D]. 北京. 中国科学院半导体研究所,2007.
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