Chinese | English
SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
新型高K 栅介质材料的制备和性质研究
李艳丽
Subtype博士
Thesis Advisor陈诺夫
2005
Degree Grantor中国科学院半导体研究所
Place of Conferral北京
Subject Area材料物理与化学
Language中文
Date Available2009-04-13 ; 2009-07-09
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/5389
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 李艳丽. 新型高K 栅介质材料的制备和性质研究[D]. 北京. 中国科学院半导体研究所,2005.
Files in This Item:
File Name/Size DocType Version Access License
lyl.pdf（2068KB） 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[李艳丽]'s Articles
Baidu academic
Similar articles in Baidu academic
[李艳丽]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[李艳丽]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.