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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
高增益、低噪声980nm半导体微腔光放大器结构
张泉; 郑厚植
2008-12-17
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2007-06-13
Language中文
Application NumberCN200710118870.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4277
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 张泉,郑厚植. 高增益、低噪声980nm半导体微腔光放大器结构[P]. 2008-12-17.
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CN200710118870.9.pdf（352KB） 限制开放--Application Full Text
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