Knowledge Management System Of Institute of Semiconductors,CAS
高温原位减薄硅基底的装置和方法 | |
刘祥林; 杨少延; 焦春美![]() | |
2008-12-31 | |
Date Available | 2009-06-04 ; 2009-06-11 |
Subtype | 发明 |
Application Date | 2007-06-27 |
Language | 中文 |
Application Number | CN200710118005.4 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/4259 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 刘祥林,杨少延,焦春美. 高温原位减薄硅基底的装置和方法[P]. 2008-12-31. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
CN200710118005.4.pdf(312KB) | 限制开放 | -- | Application Full Text |
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