SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
高温原位减薄硅基底的装置和方法
刘祥林; 杨少延; 焦春美
2008-12-31
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2007-06-27
Language中文
Application NumberCN200710118005.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4259
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘祥林,杨少延,焦春美. 高温原位减薄硅基底的装置和方法[P]. 2008-12-31.
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