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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
一种SiGe弛豫衬底材料及其制备方法
赵雷; 左玉华; 王启明
2008-06-25
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2006-12-21
Language中文
Application NumberCN200610165551.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4175
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 赵雷,左玉华,王启明. 一种SiGe弛豫衬底材料及其制备方法[P]. 2008-06-25.
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CN200610165551.9.pdf（765KB） 限制开放--Application Full Text
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