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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
利用阳极氧化浴槽制备有序的阳极氧化铝通孔模板的方法
周慧英; 曲胜春; 徐波; 张春林; 王占国 
2007-09-17
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2006-03-17
Language中文
Application NumberCN200610057490.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4137
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 周慧英,曲胜春,徐波,等. 利用阳极氧化浴槽制备有序的阳极氧化铝通孔模板的方法[P]. 2007-09-17.
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CN200610057490.4.pdf（557KB） 限制开放--Application Full Text
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