SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
一种生长氧化锌薄膜的装置及方法
杨少延; 刘祥林; 赵凤瑷; 焦春美; 董向芸; 张晓沛; 范海波; 魏宏源; 张攀峰; 王占国
2008-07-02
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2006-12-28
Language中文
Application Number200610169751
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4099
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨少延,刘祥林,赵凤瑷,等. 一种生长氧化锌薄膜的装置及方法[P]. 2008-07-02.
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