砷化镓衬底上的多层变形缓冲层的制作方法

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	砷化镓衬底上的多层变形缓冲层的制作方法
	高宏玲; 曾一平; 段瑞飞; 王宝强; 朱战平; 崔利杰
	2008-06-04
Date Available	2009-06-04 ; 2009-06-11
Subtype	发明
Application Date	2006-12-01
Language	中文
Application Number	200610144304
Document Type	专利
Identifier	http://ir.semi.ac.cn/handle/172111/4041
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	高宏玲,曾一平,段瑞飞,等. 砷化镓衬底上的多层变形缓冲层的制作方法[P]. 2008-06-04.

Related Services

Bookmark

Google Scholar

Similar articles in Bing Scholar

Terms of Use

No data!

Social Bookmark/Share

All comments (0)

No comment.

The comment function is only available to registered usersLog In

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院半导体研究所机构知识库