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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
稀土复合离子注入发光材料制备方法
张建国; 王晓欣; 成步文; 余金中; 王启明
2008-04-02
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2006-09-29
Language中文
Application Number200610140645
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4031
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 张建国,王晓欣,成步文,等. 稀土复合离子注入发光材料制备方法[P]. 2008-04-02.
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200610140645.pdf（395KB） 限制开放--Application Full Text
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