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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
低损伤PECVD沉积致密SiO2的方法
陈宇; 王良臣; 伊晓燕; 李艳
2008-05-07
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2006-11-01
Language中文
Application Number200610114192
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4013
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 陈宇,王良臣,伊晓燕,等. 低损伤PECVD沉积致密SiO2的方法[P]. 2008-05-07.
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200610114192.pdf（386KB） 限制开放--Application Full Text
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