Knowledge Management System Of Institute of Semiconductors,CAS
| 氮化镓基异质结场效应晶体管结构及制作方法 | |
| 马志勇; 王晓亮; 冉军学; 胡国新; 肖红领; 王翠梅; 罗卫军 | |
| 2008-03-12 | |
| Date Available | 2009-06-04 ; 2009-06-11 |
| Subtype | 发明 |
| Application Date | 2006-09-06 |
| Language | 中文 |
| Application Number | 200610112889 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/3977 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | 马志勇,王晓亮,冉军学,等. 氮化镓基异质结场效应晶体管结构及制作方法[P]. 2008-03-12. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 200610112889.pdf（1062KB） | 限制开放 | -- | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment