Knowledge Management System Of Institute of Semiconductors,CAS
利用离子束外延生长设备制备氮化铪薄膜材料的方法 | |
杨少延; 柴春林; 刘志凯; 陈涌海; 陈诺夫; 王占国 | |
2006-05-31 | |
Date Available | 2009-06-04 ; 2009-06-11 |
Subtype | 发明 |
Application Date | 2004-11-18 |
Language | 中文 |
Application Number | 200410009816 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/3501 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 杨少延,柴春林,刘志凯,等. 利用离子束外延生长设备制备氮化铪薄膜材料的方法[P]. 2006-05-31. |
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File Name/Size | DocType | Version | Access | License | ||
200410009816.pdf(1337KB) | 限制开放 | -- | Application Full Text |
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