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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
利用离子束外延生长设备制备氮化铪薄膜材料的方法
杨少延; 柴春林; 刘志凯; 陈涌海; 陈诺夫; 王占国
2006-05-31
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2004-11-18
Language中文
Application Number200410009816
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/3501
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 杨少延,柴春林,刘志凯,等. 利用离子束外延生长设备制备氮化铪薄膜材料的方法[P]. 2006-05-31.
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