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在硅衬底上采用磁控溅射法制备氮化铝材料的方法
杨霏; 陈诺夫
2006-08-30
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2005-02-23
Language中文
Application Number200510052401
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/3367
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 杨霏,陈诺夫. 在硅衬底上采用磁控溅射法制备氮化铝材料的方法[P]. 2006-08-30.
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200510052401.pdf（259KB） 限制开放--Application Full Text
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