Knowledge Management System Of Institute of Semiconductors,CAS
| 选择区域外延生长叠层电吸收调制激光器结构的制作方法 | |
| 朱洪亮; 李宝霞; 张靖; 王圩 | |
| 2006-03-22 | |
| Date Available | 2009-06-04 ; 2009-06-11 |
| Subtype | 发明 |
| Application Date | 2005-01-18 |
| Language | 中文 |
| Application Number | CN200510004571.3 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/3199 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | 朱洪亮,李宝霞,张靖,等. 选择区域外延生长叠层电吸收调制激光器结构的制作方法[P]. 2006-03-22. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 200510004571.pdf（649KB） | 限制开放 | -- | Application Full Text | |||
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