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在硅衬底上生长碳化硅\氮化镓材料的方法
陈诺夫; 杨霏
2006-01-11
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2004-07-06
Language中文
Application NumberCN200410062336.7
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/3167
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 陈诺夫,杨霏. 在硅衬底上生长碳化硅\氮化镓材料的方法[P]. 2006-01-11.
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200410062336.pdf（291KB） 限制开放--Application Full Text
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