SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
磁性p-n结薄膜材料及制备方法
周剑平; 陈诺夫; 张富强; 刘志凯; 杨少延; 柴春林
2003-10-29
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2002-04-18
Language中文
Application NumberCN02105698.6
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/3015
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周剑平,陈诺夫,张富强,等. 磁性p-n结薄膜材料及制备方法[P]. 2003-10-29.
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