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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
磷化铟单晶片的抛光工艺
董宏伟; 赵有文; 杨子祥; 焦景华
2003-03-12
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2001-08-20
Language中文
Application NumberCN01120368.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/2965
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 董宏伟,赵有文,杨子祥,等. 磷化铟单晶片的抛光工艺[P]. 2003-03-12.
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01120368.pdf（283KB） 限制开放--Application Full Text
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