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InGaN 多量子阱材料生长及太阳能电池器件研究
杨 静
Thesis Advisor赵德刚
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline微电子与固体电子学
Date Available2015-06-02
Document Type学位论文
Recommended Citation
GB/T 7714
杨 静. InGaN 多量子阱材料生长及太阳能电池器件研究[D]. 北京. 中国科学院研究生院,2015.
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