SEMI OpenIR  > 半导体超晶格国家重点实验室
高速CMOS图像传感器的像素单元及其制作方法
曹中祥; 吴南健; 周杨帆; 李全良; 秦琦
Rights Holder中国科学院半导体研究所
Date Available2012-07-04
Country中国
Subtype发明
Subject Area半导体物理
Application Date2012-01-17
Application NumberCN201210015129.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25392
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
曹中祥,吴南健,周杨帆,等. 高速CMOS图像传感器的像素单元及其制作方法.
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