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InGaAs/InP应变量子阱及(AlGa)InP可见光激光器结构材料的GSMBE生长及特性研究
王晓亮
Subtype博士
Thesis Advisor侯洵 ; 孔梅影 ; 孙殿照
1995
Degree Grantor中国科学院研究生院
Place of Conferral西安
Degree Discipline光学
Subject Area半导体材料
Date Available2013-12-30
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24463
Collection半导体材料科学中心
Recommended Citation
GB/T 7714
王晓亮. InGaAs/InP应变量子阱及(AlGa)InP可见光激光器结构材料的GSMBE生长及特性研究[D]. 西安. 中国科学院研究生院,1995.
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