Material transport in self-assembled InAs/GaAs quantum dot ensemble
Wang ZM; Feng SL; Yang XP; Lu ZD; Xu ZY; Chen ZG; Zheng HZ; Wang FL; Gao M; Han PD; Duan XF; Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
1997
会议名称10th International Conference on Superlattices, Microstructures and Microdevices
会议录名称PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12
页码205-211
会议日期JUL 08-11, 1997
会议地点LINCOLN, NEBRASKA
出版地BOX 11, 105523 MOSCOW, RUSSIA
出版者V S V CO. LTD
ISSN0204-3467
部门归属chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; chinese acad sci, electron microscopy lab, beijing 100083, peoples r china
摘要Introducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.
关键词Growth Transition Gaas
学科领域半导体物理
主办者Univv Nebraska, Coll Engn.; Ctr Mat Res & Anal.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/15089
专题中国科学院半导体研究所(2009年前)
通讯作者Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
推荐引用方式
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Wang ZM,Feng SL,Yang XP,et al. Material transport in self-assembled InAs/GaAs quantum dot ensemble[C]. BOX 11, 105523 MOSCOW, RUSSIA:V S V CO. LTD,1997:205-211.
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