Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser
Pan Z; Zhang Y; Du Y; Wu RH; Pan Z Tokyo Inst Technol Precis & Intelligence Lab Midori Ku 4259 Nagatsuta Yokohama Kanagawa 2268503 Japan.
1998
会议名称6th Microoptics Conference / 14th Topical Meeting on Gradient-Index Optical Systems (MOC/GRIN 97)
会议录名称JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37 (6B)
页码3673-3675
会议日期OCT 07-09, 1997
会议地点TOKYO, JAPAN
出版地DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4-CHOME, MINATO-KU TOKYO, 105, JAPAN
出版者JAPAN J APPLIED PHYSICS
ISSN0021-4922
部门归属chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要The effects of the carrier gas flow and water temperature on the oxidation rate for different reaction temperatures were investigated. The optimum conditions for stable oxidation were obtained. Two mechanisms of the oxidation process are revealed. One is the flow-controlling process, which is unstable. The other is the temperature-controlling process, which is stable. The stable region decreases for higher reaction temperatures. The simulation results for the stable oxidation region are also given. With optimum oxidation conditions, the stability and precision of the oxidation can be dramatically improved.
关键词Vcsel Selective Oxidation Stability Wet Oxidation Microstructure
学科领域半导体物理
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/15071
专题中国科学院半导体研究所(2009年前)
通讯作者Pan Z Tokyo Inst Technol Precis & Intelligence Lab Midori Ku 4259 Nagatsuta Yokohama Kanagawa 2268503 Japan.
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Pan Z,Zhang Y,Du Y,et al. Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser[C]. DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4-CHOME, MINATO-KU TOKYO, 105, JAPAN:JAPAN J APPLIED PHYSICS,1998:3673-3675.
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