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Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser | |
Pan Z; Zhang Y; Du Y; Wu RH; Pan Z Tokyo Inst Technol Precis & Intelligence Lab Midori Ku 4259 Nagatsuta Yokohama Kanagawa 2268503 Japan. | |
1998 | |
会议名称 | 6th Microoptics Conference / 14th Topical Meeting on Gradient-Index Optical Systems (MOC/GRIN 97) |
会议录名称 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37 (6B) |
页码 | 3673-3675 |
会议日期 | OCT 07-09, 1997 |
会议地点 | TOKYO, JAPAN |
出版地 | DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4-CHOME, MINATO-KU TOKYO, 105, JAPAN |
出版者 | JAPAN J APPLIED PHYSICS |
ISSN | 0021-4922 |
部门归属 | chinese acad sci, inst semicond, beijing 100083, peoples r china |
摘要 | The effects of the carrier gas flow and water temperature on the oxidation rate for different reaction temperatures were investigated. The optimum conditions for stable oxidation were obtained. Two mechanisms of the oxidation process are revealed. One is the flow-controlling process, which is unstable. The other is the temperature-controlling process, which is stable. The stable region decreases for higher reaction temperatures. The simulation results for the stable oxidation region are also given. With optimum oxidation conditions, the stability and precision of the oxidation can be dramatically improved. |
关键词 | Vcsel Selective Oxidation Stability Wet Oxidation Microstructure |
学科领域 | 半导体物理 |
收录类别 | CPCI-S |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/15071 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Pan Z Tokyo Inst Technol Precis & Intelligence Lab Midori Ku 4259 Nagatsuta Yokohama Kanagawa 2268503 Japan. |
推荐引用方式 GB/T 7714 | Pan Z,Zhang Y,Du Y,et al. Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser[C]. DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4-CHOME, MINATO-KU TOKYO, 105, JAPAN:JAPAN J APPLIED PHYSICS,1998:3673-3675. |
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