Growth and characterization of GaN on LiGaO2

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Growth and characterization of GaN on LiGaO2
	Duan SK; Teng XG; Han PD; Lu DC; Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
	1998
会议名称	9th International Conference on Metalorganic Vpour Phase Epitaxy (ICMOVPE-IX)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 195 (1-4)
页码	304-308
会议日期	MAY 31-JUN 04, 1998
会议地点	LA JOLLA, CALIFORNIA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, natl integrated optoelect lab, beijing 100083, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	The nearly lattice-matched (0 0 1)LiGaO2 substrates have been used for the growth of GaN by LP-MOVPE, GaN epilayers have been grown on both domains at very low input partial pressure of hydrogen and relatively low growth temperature. The differences in the growth rate, crystal and optical qualities of hexagonal GaN epilayers grown on LiGaO2 substrate with two polar domains are investigated. LiGaO2 single crystal with a single domain structure and an adequate surface plane is a promising substrate for the growth of high quality of hexagonal GaN thin films. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
关键词	Diodes
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15053
专题	中国科学院半导体研究所（2009年前）
通讯作者	Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
推荐引用方式 GB/T 7714	Duan SK,Teng XG,Han PD,et al. Growth and characterization of GaN on LiGaO2[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1998:304-308.

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