Mechanism on exciton-mediated energy transfer in erbium-doped silicon

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	Mechanism on exciton-mediated energy transfer in erbium-doped silicon
	Lei HB; Yang QQ; Ou HY; Wang QM; Lei HB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	International-Union-of-Materials-Research-Societies International Conference on Advanced Materials (IUMRS-ICAM 99)
会议录名称	OPTICAL MATERIALS, 14 (3)
页码	255-258
会议日期	JUN 13-18, 1999
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0925-3467
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.
关键词	Er-doped Silicon Photoluminescence Energy Transfer Al2o3 Wave-guides Er Electroluminescence Epitaxy Gaas
学科领域	半导体材料
主办者	Int Union Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14991
专题	中国科学院半导体研究所（2009年前）
通讯作者	Lei HB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Lei HB,Yang QQ,Ou HY,et al. Mechanism on exciton-mediated energy transfer in erbium-doped silicon[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2000:255-258.

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