High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers
	Chen LH; Xu ZT; Ma XY; Zhang JM; Yang GW; Xu JY; Chen LH Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	International-Union-of-Materials-Research-Societies International Conference on Advanced Materials (IUMRS-ICAM 99)
会议录名称	OPTICAL MATERIALS, 14 (3)
页码	201-204
会议日期	JUN 13-18, 1999
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0925-3467
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	In this paper, we reported on the fabrication of 980 nm InGaAs/InGaAsP strained quantum-well (QW) lasers with broad waveguide. The laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n(+)- GaAs substrate. For 3 mu m stripe ridge waveguide lasers, the threshold current is 30 mA and the maximum output power and the output power operating in fundamental mode are 350 mW and 200 mW, respectively. The output power from the single mode fiber is up to 100 mW, the coupling efficiency is 50%. We also fabricated 100 mu m broad stripe coated lasers with cavity length of 800 mu m, a threshold current density of 170 A/cm(2), a high slope efficiency of 1.03 W/A and a far-field pattern of 40 x 6 degrees are obtained. The maximum output power of 3.5 W is also obtained for 100 mu m wide coated lasers. (C) 2000 Elsevier Science B.V. All rights reserved.
关键词	High Power Al-free Laser Communication Epitaxy
学科领域	半导体材料
主办者	Int Union Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14987
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen LH Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Chen LH,Xu ZT,Ma XY,et al. High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2000:201-204.

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