Self-assembled InAs quantum wires on InP(001)

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	Self-assembled InAs quantum wires on InP(001)
	Wu J; Zeng YP; Sun ZZ; Lin F; Xu B; Wang ZG; Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	11th International Semiconducting and Insulating Materials Conference (SIMC-XI)
会议录名称	SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS
页码	205-208
会议日期	JUL 03-07, 2000
会议地点	CANBERRA, AUSTRALIA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-5815-5
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	Self-assembled InAs quantum wires (QWRs) embedded in In0.52Al0.48As In0.53Ga0.47As, and (In0.52Al0.48As)(2)/(In(0.53)Ga(0.47)AS)(2)-short-period-lattice matrixes on InP (001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], x4 direction in the 2x4 reconstructed (001) surface as revealed with high energy electron diffraction (RHEED). Alignment of quantum wires in a multilayer structure depends on the composition of spacer layers.
关键词	Short-period Superlattices Vapor-phase Epitaxy Gaas Islands State
学科领域	半导体材料
主办者	IEEE Electron Devices Soc.; Australian Natl Univ.; AIXTRON.; Oxford Instruments Plasma Technol.; Ledex Corp.; IEEE ACT Sect.; IEEE Electron Devices Soc, Australian Chapter.; Lasers & Electro-Opt Soc.; Australian Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14915
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wu J,Zeng YP,Sun ZZ,et al. Self-assembled InAs quantum wires on InP(001)[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2000:205-208.

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