Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates
	Xie MH; Cheung SH; Zheng LX; Tong SY; Zhang BS; Yang H; Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
	2002
会议名称	International Conference on Material for Advanced Technologies
会议录名称	INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2)
页码	165-172
会议日期	JUL 01-06, 2001
会议地点	SINGAPORE, SINGAPORE
出版地	JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
ISSN	0217-9792
部门归属	univ hong kong, dept phys, hong kong, hong kong, peoples r china; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence proccsses than that of the flat film.
关键词	Molecular-beam Epitaxy
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14907
专题	中国科学院半导体研究所（2009年前）
通讯作者	Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
推荐引用方式 GB/T 7714	Xie MH,Cheung SH,Zheng LX,et al. Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates[C]. JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2002:165-172.

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