Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY; Sun NF Hebei Semicond Res Inst POB 179-40 Shijiazhuang 050002 Hebei Peoples R China.
2002
会议名称9th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP IX)
会议录名称MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91
页码521-524
会议日期SEP 24-28, 2001
会议地点RIMINI, ITALY
出版地PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者ELSEVIER SCIENCE SA
ISSN0921-5107
部门归属hebei semicond res inst, shijiazhuang 050002, hebei, peoples r china; chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china; chinese acad sci, inst semicond, mat sci lab, beijing 100083, peoples r china
摘要Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved.
关键词Indium Phosphide Semi-insulating Annealing Picts Photoluminescence Semiinsulating Inp Indium-phosphide Fe Photoluminescence Temperature
学科领域半导体材料
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14901
专题中国科学院半导体研究所(2009年前)
通讯作者Sun NF Hebei Semicond Res Inst POB 179-40 Shijiazhuang 050002 Hebei Peoples R China.
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Zhao YW,Sun NF,Dong HW,et al. Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2002:521-524.
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