Space grown semi-insulating gallium arsenide single crystal and its application

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Space grown semi-insulating gallium arsenide single crystal and its application
	Chen NF; Zhong XR; Zhang M; Lin LY; Chen NF Acad Sinica Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	2002
会议名称	G0 1 Symposium of COSPAR Scientific Commission G held at the 33rd COSPAR Scientific Assembly
会议录名称	IMPACT OF THE GRAVITY LEVEL ON MATERIALS PROCESSING AND FLUID DYNAMICS, 29 (4)
页码	537-540
会议日期	JUL, 2000
会议地点	WARSAW, POLAND
出版地	THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND
出版者	PERGAMON-ELSEVIER SCIENCE LTD
ISSN	0273-1177
部门归属	acad sinica, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; hebei inst semicond, shijiazhuang 050002, hebei, peoples r china
摘要	Low noise field effect transistors and analogue switch integrated circuits (ICs) have been fabricated in semi-insulating gallium arsenide (SI-GaAs) wafers grown in space by direct ion-implantation. The electrical behaviors of the devices and the ICs have surpassed those fabricated in the terrestrially grown SI-GaAs wafers. The highest gain and the lowest noise of the transistors made from space-grown SI-GaAs wafers are 22.8 dB and 0.78 dB, respectively. The threshold back-gating voltage of the ICs made from space-grown SI-GaAs wafers is better than 8.5 V The con-elation between the characterizations of materials and devices is studied systematically. (C) 2002 COSPAR. Published by Elsevier Science Ltd. All rights reserved.
关键词	Semiinsulating Gaas Stoichiometry Defects
学科领域	半导体材料
主办者	Comm Space Res.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14895
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen NF Acad Sinica Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Chen NF,Zhong XR,Zhang M,et al. Space grown semi-insulating gallium arsenide single crystal and its application[C]. THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND:PERGAMON-ELSEVIER SCIENCE LTD,2002:537-540.

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