Resonant tunneling of holes in GaMnAs-related double- barrier structures

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	Resonant tunneling of holes in GaMnAs-related double- barrier structures
	Wu HB; Chang K; Xia JB; Peeters FM; Wu HB Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
	2003
会议名称	PASPS Conference 2002
会议录名称	JOURNAL OF SUPERCONDUCTIVITY, 16 (2)
页码	279-282
会议日期	JUL, 2002
会议地点	WURZBURG, GERMANY
出版地	233 SPRING ST, NEW YORK, NY 10013 USA
出版者	KLUWER ACADEMIC/PLENUM PUBL
ISSN	0896-1107
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; univ instelling antwerp, dept phys, b-2610 antwerp, belgium
摘要	Using the multiband quantum transmitting boundary method (MQTBM), hole resonant tunneling through AlGaAs/GaMnAs junctions is investigated theoretically. Because of band-edge splitting in the DMS layer, the current for holes with different spins are tuned in resonance at different biases. The bound levels of the "light" hole in the quantum well region turned out to be dominant in the tunneling channel for both "heavy" and "light" holes. The resonant tunneling structure can be used as a spin filter for holes for adjusting the Fermi energy and the thickness of the junctions.
关键词	Zeeman Effect Gamnas Layer Double-barrier Structure Approximation
学科领域	半导体物理
主办者	PASPS.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14855
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wu HB Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wu HB,Chang K,Xia JB,et al. Resonant tunneling of holes in GaMnAs-related double- barrier structures[C]. 233 SPRING ST, NEW YORK, NY 10013 USA:KLUWER ACADEMIC/PLENUM PUBL,2003:279-282.

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