The diphasic nc-Si/a-Si : H thin film with improved medium-range order

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	The diphasic nc-Si/a-Si : H thin film with improved medium-range order
	Zhang S; Liao X; Xu Y; Martins R; Fortunato E; Kong G; Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
	2004
会议名称	20th International Conference on Amorphous and Microcrystalline Semiconductors
会议录名称	JOURNAL OF NON-CRYSTALLINE SOLIDS, 338
页码	188-191
会议日期	AUG 25-29, 2003
会议地点	Campos do Jordao, BRAZIL
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-3093
部门归属	chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china; chinese acad sci, ctr condensed mater phys, beijing 100083, peoples r china; new univ lisbon, dept mat sci, fac sci & technol, p-2829516 caparica, portugal; nova univ, cemop, p-2829516 caparica, portugal
摘要	A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.
关键词	Amorphous-silicon Films Scattering Absorption Densities Hydrogen
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14833
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
推荐引用方式 GB/T 7714	Zhang S,Liao X,Xu Y,et al. The diphasic nc-Si/a-Si : H thin film with improved medium-range order[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2004:188-191.

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