Growth of Fe doped semi-insulating InP by LP-MOCVD

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Growth of Fe doped semi-insulating InP by LP-MOCVD
	Yan XJ; Zhu HL; Wang W; Xu GY; Zhou F; Ma CH; Wang XJ; Tian HL; Zhang JY; Wu RH; Wang QM; Yan XJ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	1998
会议名称	Conference on Integrated Optoelectronics II
会议录名称	INTEGRATED OPTOELECTRONICS II, 3551
页码	80-83
会议日期	SEP 18-19, 1998
会议地点	BEIJING, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3012-9
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	The semi-insulating InP has been grown using ferrocene as a dopant source by low pressure MOCVD. Fe doped semiinsulating InP material whose resistivity is equal to 2.0x10(8)Omega*cm and the breakdown field is Beater than 4.0x10(4)Vcm(-1) has been achieved. It is found that the magnitude of resistivity increases with growing pressure enhancement under keeping TMIn, PH3, ferrocene (Fe(C5H5)(2)) flow constant at 620 degrees C growth temperature. Moreover, the experimental results which resistivity varies with ferrocene mole fraction are given. It is estimated that active Fe doping efficiency; eta, is equal to 8.7x10(-4) at 20mbar growth pressure and 620 degrees C growth temperature by the comparison of calculated and experimental results.
关键词	Semi-insulating Fe-doped Mocvd
学科领域	光电子学
主办者	SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13867
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yan XJ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Yan XJ,Zhu HL,Wang W,et al. Growth of Fe doped semi-insulating InP by LP-MOCVD[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1998:80-83.

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