Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy

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	Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy
	Liu ZL; He ZJ; Yu F; Nie JP; Yu YH; Liu ZL Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	1998
会议名称	5th International Conference on Solid-State and Integrated Circuit Technology
会议录名称	1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS
页码	191-194
会议日期	OCT 21-23, 1998
会议地点	BEIJING, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-4306-9
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	CMOS/SOS devices have lower carriers mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly results from the defects of heteroepitaxial silicon film, especially from the defects near Si-Sapphire interface. This paper describes the experiment results of CMOS/SOS devices characteristics improved by a better epitaxial silicon quality which is obtained by a modified solid phase epitaxy.
关键词	Sapphire Films Silicon
学科领域	半导体材料
主办者	Chinese Inst Electr.; IEEE Electron Devices Soc.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; URSI Commiss D.; IEE, Electr Div, UK.; Korea Inst Telemat & Electr.; IEEE Beijing Sect.; Mat Res Soc.; Natl Nat Sci Fdn China.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13819
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu ZL Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Liu ZL,He ZJ,Yu F,et al. Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,1998:191-194.

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