Strained MQW electro-absorption modulators with high extinction ratio and low capacitance

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Strained MQW electro-absorption modulators with high extinction ratio and low capacitance
	Sun Y; Wang W; Chen WX; Liu GL; Zhou F; Zhu HL; Sun Y Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
	2001
会议名称	13th International Conference on Indium Phosphide and Related Materials (IPRM)
会议录名称	2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS
页码	155-157
会议日期	MAY 14-18, 2001
会议地点	NARA, JAPAN
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISSN	1092-8669
ISBN	0-7803-6700-6
部门归属	chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china
摘要	We fabricate an electro-absorption modulator for optical network system using a new strategy, the improved modulation properties of the strained InGaAs/InAlAs MQW show it's polarization independent, high extinction ratio (> 40dB) and low capacitance (C <0.6pF) which can achieve an ultra-high frequency(> 10GHz). The device is be used in 10Gbps optical time division multiplex (OTDM) system as a signal generator.
关键词	Electroabsorption
学科领域	光电子学
主办者	Japan Soc Appl Phys.; IEEE Lasers & Electro Opt Soc.; IEEE Electron Devices Soc.; Inst Electr, Informat & Commun Engineers.; Optoelectr Ind & Technol Dec Assoc.; Res & Dev Assoc Future Electron Devices.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13735
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sun Y Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Sun Y,Wang W,Chen WX,et al. Strained MQW electro-absorption modulators with high extinction ratio and low capacitance[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2001:155-157.

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